Semiconductor package and method for fabricating a semiconductor package

ABSTRACT

A semiconductor package is disclosed. In one example, the semiconductor package comprises a semiconductor chip, a molded body encapsulating the semiconductor chip and comprising a top face and an opposing bottom face and four side faces connecting the top and bottom faces, and a plurality of electrical contacts arranged on two of the side faces of the molded body, wherein the other two side faces are metal-free side faces, and wherein the molded body comprises a cut surface at no more than one of the side faces.

CROSS-REFERENCE TO RELATED APPLICATION

This Utility Patent Application claims priority to German PatentApplication No. 10 2020 108 114.6, filed Mar. 24, 2020, which isincorporated herein by reference.

TECHNICAL FIELD

This disclosure relates in general to a semiconductor package as well asto a method for fabricating a semiconductor package.

BACKGROUND

Semiconductor packages may have to meet strict requirements concerningtheir electrical properties. For example, semiconductor packages may berequired to exhibit a certain minimum creepage distance. A contaminationwith metal particles on the surface of a molded body of a semiconductorpackage as well as exposed metal parts, e.g. exposed leadframe parts,may negatively affect the creepage distance. Furthermore, there may be arequirement to protect exposed metal parts of semiconductor packages,e.g. electrical contacts, from oxidation and corrosion due to exposureto environment. The automotive sector may be an example of a field ofapplication which may have the above described requirements. It maytherefore be desirable to ensure that a semiconductor package canreliably provide a minimum creepage distance and a proper oxidationprotection. Improved semiconductor packages and improved methods forfabricating semiconductor packages may help with solving these and otherproblems.

The problem on which the invention is based is solved by the features ofthe independent claims. Further advantageous examples are described inthe dependent claims.

SUMMARY

Various aspects pertain to a semiconductor package comprising asemiconductor chip, a molded body encapsulating the semiconductor chipand comprising a top face and an opposing bottom face and four sidefaces connecting the top and bottom faces, and a plurality of electricalcontacts arranged on two of the side faces of the molded body, whereinthe other two side faces are metal-free side faces, and wherein themolded body comprises a cut surface at no more than one of the sidefaces.

Various aspects pertain to a method for fabricating a semiconductorpackage, wherein the method comprises providing a leadframe comprising adie carrier, a plurality of electrical contacts, four dummy leads and aframe, wherein the die carrier and the plurality of electrical contactsare connected to the frame by the four dummy leads, arranging asemiconductor chip on the die carrier, molding over the semiconductorchip and the die carrier, thereby fabricating a molded body, the moldedbody comprising a top face and an opposing bottom face and four sidefaces connecting the top and bottom faces, wherein the plurality ofelectrical contacts is exposed on two of the side faces and wherein theother two side faces are metal-free side faces that do not come intocontact with the leadframe, covering the exposed electrical contactswith a coating, and singulating the semiconductor package from the frameby cutting the four dummy leads.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings illustrate examples and together with thedescription serve to explain principles of the disclosure. Otherexamples and many of the intended advantages of the disclosure will bereadily appreciated as they become better understood by reference to thefollowing detailed description. The elements of the drawings are notnecessarily to scale relative to each other. Identical referencenumerals designate corresponding similar parts.

FIGS. 1A to 1C show a semiconductor package comprising a plurality ofelectrical contacts, a molded body and a cut surface at no more than oneof the side faces of the molded body.

FIG. 2 shows a sectional view of a further semiconductor packagecomprising a coating that covers the electrical contacts.

FIGS. 3A to 3D show a further semiconductor package in various stages offabrication.

FIGS. 4A and 4B show the fabrication of a molded body of a semiconductorpackage, wherein the molded body does not come into contact with anouter frame part of a leadframe.

FIGS. 5A and 5B show a top down view of a molding tool and a molded bodyof a semiconductor package, obtained from molding with the molding tool.

FIG. 6 is a flow chart of a method for fabricating a semiconductorpackage.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings. It may be evident, however, to one skilled in theart that one or more aspects of the disclosure may be practiced with alesser degree of the specific details. In other instances, knownstructures and elements are shown in schematic form in order tofacilitate describing one or more aspects of the disclosure. In thisregard, directional terminology, such as “top”, “bottom”, “left”,“right”, “upper”, “lower” etc., is used with reference to theorientation of the Figure(s) being described.

In addition, while a particular feature or aspect of an example may bedisclosed with respect to only one of several implementations, suchfeature or aspect may be combined with one or more other features oraspects of the other implementations as may be desired and advantageousfor any given or particular application, unless specifically notedotherwise or unless technically restricted. Furthermore, to the extentthat the terms “include”, “have”, “with” or other variants thereof areused in either the detailed description or the claims, such terms areintended to be inclusive in a manner similar to the term “comprise”. Theterms “coupled” and “connected”, along with derivatives thereof may beused. It should be understood that these terms may be used to indicatethat two elements cooperate or interact with each other regardlesswhether they are in direct physical or electrical contact, or they arenot in direct contact with each other; intervening elements or layersmay be provided between the “bonded”, “attached”, or “connected”elements. However, it is also possible that the “bonded”, “attached”, or“connected” elements are in direct contact with each other. Also, theterm “exemplary” is merely meant as an example, rather than the best oroptimal.

The semiconductor chip(s) mentioned further below may be of differenttypes, may be manufactured by different technologies and may include forexample integrated circuits and/or passives, logic integrated circuits,control circuits, microprocessors, memory devices, etc.

The examples of a semiconductor package described in the following mayuse various types of semiconductor chips or circuits incorporated in thesemiconductor chips, among them AC/DC or DC/DC converter circuits, powerMOSFETs, power Schottky diodes, JFETs (Junction Gate Field EffectTransistors), power bipolar transistors, power integrated circuits, etc.The semiconductor chip(s) may have contact pads (or electrodes) whichallow electrical contact to be made with the integrated circuitsincluded in the semiconductor chip(s). The electrodes may be arrangedall at only one main face of the semiconductor chip(s) or at both mainfaces of the semiconductor chip(s).

The semiconductor chip(s) may be covered with an encapsulation materialin order to be embedded in an encapsulant after being bonded to a devicecarrier (substrate). The encapsulation material may be electricallyinsulating. The encapsulation material may comprise or be made of anyappropriate plastic or polymer material such as, e.g., a duroplastic,thermoplastic or thermosetting material, and may e.g. contain fillermaterials. Various techniques may be employed to encapsulate thesemiconductor chip(s) with the encapsulation material, for example anysuitable molding technique.

FIG. 1A shows a sectional view of a semiconductor package 100 thatcomprises a semiconductor chip 110, a molded body 120 and a plurality ofelectrical contacts 130. FIG. 1B shows a view of the semiconductorpackage 100 along the arrow A in FIG. 1A. FIG. 1C shows the same view asFIG. 1A, however in FIG. 1C the molded body 120 is depicted opaque.

In semiconductor package 100 the molded body 120 encapsulates thesemiconductor chip 110. For example, the molded body 120 may encapsulatethe semiconductor chip 110 on all sides. The molded body 120 comprises atop face 121 and an opposing bottom face 122 and four side faces 123connecting the top and bottom faces 121, 122.

The plurality of electrical contacts 130 may e.g. be arranged on two ofthe four side faces 123 of the molded body 120, for example on opposingones of the four side faces 123. The other two side faces 123 (i.e.those side faces 123 that do not comprise any electrical contacts 130)are metal-free side faces. “Metal-free” in particular may mean that therespective side face does not comprise any form of metal part, like ametal contact, a metal stud, a metal peg, remains of a metal tie-bar,etc. that is exposed on the respective side face. In other words, ametal-free side face is comprised solely of the molded body 120 but itdoes not comprise any exposed metal.

Furthermore, “metal-free” may mean that the surface of the molded body120 on the respective side face is free of contamination with metalparticles. In particular, the molded body 120 may be fabricated by usinga molding tool, wherein a molding cavity is formed by a top part and abottom part. The side faces 123 of the molded body may comprise a smallridge at the interface between the top part and the bottom part of themolding tool as described in greater detail further below with respectto FIGS. 4A and 4B. “Metal-free” may mean that this ridge is free of anymetal residue like leadframe residue.

As shown in FIG. 1C, the molded body 120 may comprise a cut surface 140.The cut surface 140 may e.g. be the place of an inlet or an outlet ofthe molding cavity (e.g. allowing mold material to flow into the moldingcavity or allowing gas to flow out of the molding cavity, compare FIGS.5A and 5B). After the mold material in the molding cavity has beencured, waste material filling the inlet or outlet may be cut off orstamped off, leaving the cut surface 140.

The molded body 120 comprises a cut surface 140 at no more than one ofthe side faces 123. The other side faces 123, in particular the sideface 123 opposite the side face 123 with the cut surface 140 are free ofany cut surface.

The cut surface 140 may for example be arranged on one of the two sidefaces 123 that do not comprise the electrical contacts 130. The cutsurface 140 may have any suitable size and may for example occupy nomore than 30%, no more than 20%, or no more than 10% of the surface areaof the respective side face 123.

The semiconductor chip 110 may e.g. be a power semiconductor chip,configured to operate with a high voltage and/or a high electricalcurrent. According to an example, the semiconductor chip 110 may bearranged on one or more of the electrical contacts 130. However, it isalso possible that the semiconductor chip 110 is arranged on a diecarrier that is not contiguous with an electrical contact 130 (as shownin the example of FIG. 1A). The semiconductor package 100 may comprise asingle semiconductor chip 110 or it may comprise more than onesemiconductor chip 110. The electrical contacts 130 may e.g. be coupledto load electrodes (e.g. a source electrode and a drain electrode or anemitter electrode and a collector electrode) as well as to a controlelectrode (e.g. a gate electrode) of the semiconductor chip 110.

The molded body 120 may e.g. comprise a polymer material or a resin.According to an example, the molded body 120 may also comprise a fillermaterial, which may e.g. be configured to reduce the thermal resistanceof the molded body 120.

The semiconductor package 100 may for example be a small outlinepackage. Neighboring electrical contacts 130 may for example have adistance of 1.27 mm. The side faces 123 without electrical contacts 130may have a length l of 7 mm or more. The side faces 123 with electricalcontacts may e.g. have a width w of 5 mm or more, 8 mm or more, or 10 mmor more.

The electrical contacts 130 may for example have a gull wing shape,wherein an outer tip of the electrical contacts 130 is bent downwards asshown in FIGS. 1A and 1C. The electrical contacts 130 may comprise orconsist of a metal like Al, Cu, Fe or any other suitable material.

FIG. 2 shows a sectional view of a semiconductor package 200, which maybe similar or identical to the semiconductor package 100, except for thedifferences described in the following.

In addition to the parts described with respect to the semiconductorpackage 100, the semiconductor package 200 further comprises a coating210 covering the electrical contacts 130. The coating 210 may inparticular cover every one of the electrical contacts 130. The coating210 may for example be a Sn coating, a NiPd coating, a NiAu coating or acoating comprising any other suitable metal or metal alloy. The coating210 may for example be deposited on the electrical contacts 130galvanically, by using vapor deposition or by using any other suitabletechnique.

The coating 210 completely covers every surface of each electricalcontact 130, except for an end face 131 at the tip of each electricalcontact which is not covered by the coating 210. In other words, thematerial of the electrical contacts 130 is exposed to the outside solelyat the end faces 131. The end faces 131 are not covered by the coating210 because the electrical contacts 130 are still connected to aconnecting bar at the end faces 131 during deposition of the coating 210(this is explained in greater detail further below with respect to FIGS.3C and 3D).

According to an example, the coating 210 may be configured to act as aprotection layer for the electrical contacts 130, in particular as anoxidation prevention layer. The coating 210 may have any suitablethickness, e.g. a thickness in the nanometer range or a thickness in themicrometer range.

FIGS. 3A to 3D show a semiconductor package 300 in various stages offabrication. The semiconductor package 300 may be similar or identicalto the semiconductor packages 100 and 200.

FIG. 3A shows a leadframe 310 prior to arranging the semiconductor chip110 on the leadframe, encapsulating the semiconductor chip 110 with themolded body 120 and singulating the semiconductor package 300 from therest of the leadframe 310.

The leadframe 310 comprises the electrical contacts 130, a frame 320 andconnecting bars 330. The leadframe 310 may further comprise one or moredie pads 340 for one or more semiconductor chips 110.

The frame 320 may be arranged left and right of the other parts of theleadframe 310 and it may run along the length of the leadframe stripe.The frame 320 may be the part of the leadframe stripe that connectsconsecutive sections of the leadframe that are used in the fabricationof individual semiconductor packages 300.

The electrical contacts 130 are connected to the frame 320 by theconnecting bars 330. The connecting bars 330 are connected to theelectrical contacts 130 at the tip of each electrical contact 130 andthe connecting bars 330 may be arranged essentially perpendicular to theelectrical contacts 130 and the frame 320.

According to an example, the electrical contacts 130 may further beconnected to the frame 320 by connecting pieces 350. The connectingpieces 350 may be arranged essentially parallel to the connecting bars330. In some embodiments, the connecting pieces 350 may take the form ofa dambar. The connecting pieces 350 may be connected to the electricalcontacts 130 at lateral sides of the electrical contacts 130. Duringfabrication of the semiconductor package 300, the connecting pieces 350may be cut away. However, after the connecting pieces 350 have been cutaway the electrical contacts 130 are still connected to the frame 320 bythe connecting bars 330.

FIG. 3B shows a stage of fabrication of the semiconductor package 300,wherein the one or more semiconductor chips 110 have been arranged onthe die pad(s) 340 and the molded body 120 has been formed.

As shown in FIG. 3B, the molded body 120 does not come into contact withthe frame 320. Instead, a gap 360 is arranged between the molded body120 and the frame 320, completely separating the two. In particular, theleadframe 310 does not comprise any form of tie bar which at any pointduring the fabrication of the semiconductor package 300 bridges the gap360. The gap 360 may for example have a width of 200 μm or more, 300 μmor more, 400 μm or more, or 500 μm or more.

FIG. 3C shows the semiconductor package 300 in a stage of fabrication,wherein the connecting pieces 350 have been cut away. The electricalcontacts 130 (and by extension, the semiconductor package 300) areconnected to the frame 320 by the connecting bars 330 and by dummy leads370, wherein a dummy lead 370 is arranged at each end of each connectingbar 330. A first end of each dummy lead 370 is connected to one of theconnecting bars 330 and an opposing second end of each dummy lead 370 isconnected to the frame 320.

As shown in FIG. 3C, the dummy leads 370 may essentially have the sameshape and the same spatial orientation as the electrical contacts 130.The only difference between the dummy leads 370 and the electricalcontacts 130 may be that the second end of each dummy lead 370 isattached to the frame 320, whereas the second end of each electricalcontact 130 is arranged within the molded body 120.

The coating 210 may be deposited on the electrical contacts 130 in thestate of fabrication shown in FIG. 3C. Since the connecting pieces 350have been cut away beforehand, the coating 210 may cover the surface ofthe electrical contacts 130 completely, except for the tips where theelectrical contacts 130 are connected to the connecting bar 330.

Furthermore, the electrical contacts 130 may be subjected to a formingprocess, for example a stamping process, in order to obtain a gull wingshape, as shown in FIG. 3C. This forming process may e.g. be performedprior to depositing the coating 210. The dummy leads 370 may also besubjected to the forming process and may therefore obtain the same gullwing shape as the electrical contacts 130.

FIG. 3D shows the semiconductor package 300 after singulation from theframe 320. Singulation comprises cutting the electrical contacts 130away from the connecting bars 330. Since in the state of fabricationshown in FIG. 3C the semiconductor package 300 is connected to the frame320 solely by the connecting bars 330 and dummy leads 370, thesingulation process does not require cutting at any other location.

FIG. 4A shows a view of the leadframe 310 along the arrow A in FIG. 3A.In FIG. 4A a molding tool 410 is arranged around part of the leadframe310. The molding tool 410 forms a molding cavity 420, wherein theelectrical contacts 130 are arranged within the molding cavity 420 andthe frame 320 is arranged outside the molding cavity 420. A moldmaterial may be allowed to flow into the molding cavity 420 in order tofabricate the molded body 120. For this purpose, the molding tool 410may comprise a single opening, e.g. at a side face 123 of the moldedbody 120 (compare FIG. 5A).

The molding tool 410 may comprise an upper half 411 and a lower half412, wherein both halves 411, 412 may be pressed together to form themolding cavity 420. In particular, the upper half 411 and the lower half412 may touch within the gap 360 of the leadframe 310. The upper andlower halves 411, 412 may be arranged in the gap 360 such that they donot come into contact with the frame 320. Instead, the upper and lowerhalves 411, 412 may be spaced apart from the frame by a distance d>0.For this reason, mold material filling the molding cavity 420 does notcome into contact with the frame 320. The leadframe 310 in particularcomprises no tie bar reaching from the frame 320 into the molding cavity420.

FIG. 4B shows the fabricated molded body 120 after the molding tool 410has been removed. Since the frame 320 is not clamped between the twohalves 411, 412 the molded body 120 does not comprise a pronounced moldflash in the plane of the leadframe 310. Instead, the molded body 120may e.g. comprise no more than a thin ridge 430 at the interface of theupper and lower halves 411, 412. A thickness of the ridge 430 may bemuch smaller than a thickness z of the leadframe 310.

Since the molded body 120 does not come into contact with the frame 320,the side faces 123 of the molded body 120 without electrical contacts130 may be free of any contamination with metal particles. Such acontamination would occur if the frame 320 was clamped between the twohalves 411, 412 of the molding tool 410 such that the mold materialcomes into contact with the frame 320. After curing of the moldmaterial, the frame 320 would have to be removed from the molded body120, leaving behind a smear of metal particles on the surface of themolded body 120. Such a metal particle contamination could reduce thecreepage distance of the semiconductor package to a value smaller thanthe length l of the semiconductor package (compare FIG. 1C).

Furthermore, since no tie bar connects the molded body 120 to the frame320 no such tie bar has to be truncated or pulled out of the molded body120. For this reason, the metal-free side faces 123 do not comprise anyresidues of such a tie bar, i.e. no truncated tie bar part and also nocavity where a tie bar used to be.

FIG. 5A shows a schematic top down view of the molding tool 410. Themolding tool 410 comprises a single inlet 510 connected to the cavity420 and configured to allow a mold material flow into the cavity 420 asindicated by the arrow.

FIG. 5B shows the molded body 120 after the mold material has been curedand the molding tool 410 has been removed. At the location of the inlet510 there is a protrusion 520 formed of excess mold material attached tothe molded body 120. Removing the protrusion 520 from the molded body120 may produce the cut surface 140 in the respective side face 123 ofthe molded body 120 (compare FIG. 1C). The protrusion 520 may forexample be cut away or stamped away.

The protrusion 520 may e.g. be removed while the semiconductor package300 is still connected to the frame 320 or it may be removed after thesemiconductor package has been singulated from the frame 320.

Since the semiconductor package 300 is connected to the leadframe 310 bythe dummy leads 370 prior to singulation, the protrusion 520 does nothave to be configured to mechanically couple the semiconductor package300 to the frame 320. It is in particular not necessary to provideseveral protrusions, e.g. arranged on opposing side faces 123 of themolded body 120, to mechanically couple the semiconductor package 300 tothe frame 320 prior to singulation.

Not having more than one protrusion that needs to be removed may bebeneficial because cutting or stamping the protrusion 520 may producemold material particles which may sediment on the semiconductor package300, for example on the electrical contacts 130. This may for exampleimpair the electrical properties and/or the solderability of theelectrical contacts 130.

FIG. 6 is a flow chart of a method 600 for fabricating a semiconductorpackage according to one embodiment of this disclosure. The method 600may for example be used to fabricate the semiconductor packages 100, 200and 300.

The method 600 comprises at 601 an act of providing a leadframecomprising a die carrier, a plurality of electrical contacts, four dummyleads and a frame, wherein the die carrier and the plurality ofelectrical contacts are connected to the frame by the four dummy leads,at 602 an act of arranging a semiconductor chip on the die carrier, at603 an act of molding over the semiconductor chip and the die carrier,thereby fabricating a molded body, the molded body comprising a top faceand an opposing bottom face and four side faces connecting the top andbottom faces, wherein the plurality of electrical contacts is exposed ontwo of the side faces and wherein the other two side faces aremetal-free side faces that do not come into contact with the leadframe,at 604 an act of covering the exposed electrical contacts with acoating, and at 605 an act of singulating the semiconductor package fromthe frame by cutting the four dummy leads.

The act of providing 601 the leadframe may for example compriseproviding the leadframe 310 as shown in FIG. 3A. The act of arranging602 a semiconductor chip may e.g. comprise arranging the semiconductorchip 110 on the die pad 340. The act of molding 603 may comprisefabricating the molded body 120 as e.g. shown in FIGS. 4A, 4B and FIGS.5A, 5B.

According to an example, the act of molding 603 may be performed whilethe electrical contacts 130 are still connected to the frame 320 by theconnecting pieces 350, as shown in FIGS. 3A and 3B.

The act of covering 604 may comprise covering the electrical contacts130 with the coating 210 as described with respect to FIG. 2. The act ofcovering 604 may e.g. be performed after the act of molding 603. The actof covering 604 may e.g. be performed after the connecting pieces 350have been removed. This way, the exposed electrical contacts 130 may becompletely covered by the coating 210 except for the tips which arestill connected to the connecting bars 330.

The act of singulating 605 may be performed after the act of covering604. According to an example, an act of bending the electrical contacts130 and the dummy leads 370 may be performed prior to the act ofsingulating 605 in order to obtain the gull wing shape shown e.g. inFIGS. 3D and 3C. The act of bending may e.g. be performed after the actof covering 604.

EXAMPLES

In the following, the semiconductor package and the method forfabricating a semiconductor package are further explained using specificexamples.

Example 1 is a semiconductor package, comprising: a semiconductor chip,a molded body encapsulating the semiconductor chip and comprising a topface and an opposing bottom face and four side faces connecting the topand bottom faces, and a plurality of electrical contacts arranged on twoof the side faces of the molded body, wherein the other two side facesare metal-free side faces, and wherein the molded body comprises a cutsurface at no more than one of the side faces.

Example 2 is the semiconductor package of example 1, further comprising:a coating covering the electrical contacts such that no more than thetips of the contacts are left uncovered.

Example 3 is the semiconductor package of example 1 or 2, wherein themetal-free side faces are free of any smear with metal particles.

Example 4 is the semiconductor package of example 2, wherein the coatingcomprises or consists of Sn.

Example 5 is the semiconductor package of one of the preceding examples,wherein the metal-free side faces have a length of 7 mm or more.

Example 6 is the semiconductor package of one of the preceding examples,wherein the metal-free side faces are free of any cavity arranged in aplane comprising the electrical contacts.

Example 7 is the semiconductor package of one of the preceding examples,wherein the electrical contacts comprise or consist of Cu.

Example 8 is the semiconductor package of one of the preceding examples,wherein a length of the side faces comprising the electrical contacts isgreater than a length of the metal-free side faces.

Example 9 is the semiconductor package of one of the preceding examples,wherein a creepage distance along the metal-free side faces is 8 mm ormore.

Example 10 is the semiconductor package of one of the precedingexamples, wherein a thickness of a mold flash at the metal-free sidefaces is smaller than a thickness of the electrical contacts, measuredperpendicular to the top and bottom faces.

Example 11 is a method for fabricating a semiconductor package, themethod comprising: providing a leadframe comprising a die carrier, aplurality of electrical contacts, four dummy leads and a frame, whereinthe die carrier and the plurality of electrical contacts are connectedto the frame by the four dummy leads, arranging a semiconductor chip onthe die carrier, molding over the semiconductor chip and the diecarrier, thereby fabricating a molded body, the molded body comprising atop face and an opposing bottom face and four side faces connecting thetop and bottom faces, wherein the plurality of electrical contacts isexposed on two of the side faces and wherein the other two side facesare metal-free side faces that do not come into contact with theleadframe, covering the exposed electrical contacts with a coating, andsingulating the semiconductor package from the frame by cutting the fourdummy leads.

Example 12 is the method of example 11, wherein a gap is arrangedbetween the metal-free side faces and the frame of the leadframe.

Example 13 is the method of example 11 or 12, wherein the plurality ofelectrical contacts is arranged in two rows along the respective sidefaces of the molded body, and wherein the four dummy leads are arrangedat both ends of both rows.

Example 14 is the method of one of examples 11 to 13, wherein the fourdummy leads are connected to the plurality of electrical contacts byconnecting bars, the connecting bars being arranged at the tips of theelectrical contacts and perpendicular to the electrical contacts and thefour dummy leads.

Example 15 is the method of example 14, wherein during the covering ofthe electrical contacts with the coating the semiconductor package ismechanically coupled to the frame solely by the connecting bars anddummy leads.

Example 16 is the method of one of examples 11 to 15, furthercomprising: bending the plurality of electrical contacts and the fourdummy leads such that the electrical contacts and the four dummy leadsobtain a gull-wing shape.

Example 17 is the method of one of examples 11 to 16, wherein theelectrical contacts are coated such that no more than the tips of theelectrical contacts are left uncovered by the coating.

Example 18 is an apparatus comprising means for performing the method ofone of examples 11 to 17.

While the disclosure has been illustrated and described with respect toone or more implementations, alterations and/or modifications may bemade to the illustrated examples without departing from the spirit andscope of the appended claims. In particular regard to the variousfunctions performed by the above described components or structures(assemblies, devices, circuits, systems, etc.), the terms (including areference to a “means”) used to describe such components are intended tocorrespond, unless otherwise indicated, to any component or structurewhich performs the specified function of the described component (e.g.,that is functionally equivalent), even though not structurallyequivalent to the disclosed structure which performs the function in theherein illustrated exemplary implementations of the disclosure.

1. A semiconductor package, comprising: a semiconductor chip; a moldedbody encapsulating the semiconductor chip and comprising a top face andan opposing bottom face and four side faces connecting the top andbottom faces; and a plurality of electrical contacts arranged on two ofthe side faces of the molded body, wherein the other two side faces aremetal-free side faces, and a coating covering the electrical contactssuch that no more than the tips of the contacts are left uncovered. 2.The semiconductor package of claim 1, further comprising: a lead framedoes not comprise a tie bar for supporting a die carrier of the leadframe, wherein the die carrier is molded inside the molded body.
 3. Thesemiconductor package of claim 1, wherein the metal-free side faces arefree of any smear with metal particles.
 4. The semiconductor package ofclaim 1, wherein the molded body comprises a cut surface at no more thanone of the side faces.
 5. The semiconductor package of claim 1, whereinthe metal-free side faces are free of any cavity arranged in a planecomprising the electrical contacts.
 6. The semiconductor package ofclaim 1, wherein a creepage distance along the metal-free side faces is8 mm or more.
 7. The semiconductor package of claim 1, wherein athickness of a mold flash at the metal-free side faces is smaller than athickness of the electrical contacts, measured perpendicular to the topand bottom faces.
 8. A method for fabricating a semiconductor package,the method comprising: providing a leadframe comprising a die carrier, aplurality of electrical contacts, a plurality of dummy leads and aframe, wherein the die carrier and the plurality of electrical contactsare connected to the frame by the plurality of dummy leads; arranging asemiconductor chip on the die carrier; molding over the semiconductorchip and the die carrier, thereby fabricating a molded body, the moldedbody comprising a top face and an opposing bottom face and four sidefaces connecting the top and bottom faces, wherein the plurality ofelectrical contacts is exposed on two of the side faces and wherein theother two side faces are metal-free side faces that do not come intocontact with the leadframe; covering the exposed electrical contactswith a coating; and singulating the semiconductor package from the frameby cutting the plurality of dummy leads.
 9. The method of claim 8,wherein a gap is arranged between the metal-free side faces and theframe of the leadframe.
 10. The method of claim 8, wherein the pluralityof electrical contacts is arranged in two rows along the respective sidefaces of the molded body, and wherein the plurality of dummy leads arearranged at both ends of both rows.
 11. The method of claim 8, whereinthe plurality of dummy leads are connected to the plurality ofelectrical contacts by connecting bars, the connecting bars beingarranged at the tips of the electrical contacts and perpendicular to theelectrical contacts and the plurality of dummy leads.
 12. The method ofclaim 11, wherein during the covering of the electrical contacts withthe coating the semiconductor package is mechanically coupled to theframe solely by the connecting bars and dummy leads.
 13. The method ofclaim 8, further comprising: bending the plurality of electricalcontacts and the plurality of dummy leads.
 14. The method of claim 8,wherein the electrical contacts are coated such that no more than thetips of the electrical contacts are left uncovered by the coating.
 15. Aleadframe, comprising: a die carrier, a plurality of electricalcontacts; a plurality of dummy leads; and a frame; wherein the diecarrier and the plurality of electrical contacts connect to the frame bythe plurality of dummy leads.
 16. A leadframe of claim 15, wherein thedie carrier does not directly connect to the plurality of dummy leads.17. A leadframe of claim 15, wherein the plurality of electricalcontacts and the plurality of dummy leads connect to the frame via aconnecting bar, and one end of each electrical contact connects theconnecting bar while another end does not connect to the frame, and oneend of each dummy lead connects to the connecting bar while another endconnect to the frame.
 18. A leadframe of claim 14, wherein the leadframedoes not have a tie bar directly connecting the die carrier and theframe.